IRFS4610PBF vs NVB6411ANT4G feature comparison

IRFS4610PBF Infineon Technologies AG

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NVB6411ANT4G onsemi

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Rohs Code Yes
Part Life Cycle Code Active End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG ONSEMI
Package Description SMALL OUTLINE, R-PSSO-G2 D2PAK-3/2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon onsemi
Avalanche Energy Rating (Eas) 370 mJ 470 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 73 A 77 A
Drain-source On Resistance-Max 0.014 Ω 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 290 A 285 A
Surface Mount YES YES
Terminal Finish MATTE TIN OVER NICKEL MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code D2PAK 2 LEAD
Pin Count 3
Manufacturer Package Code 418B-04
Factory Lead Time 4 Weeks
JESD-609 Code e3
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 217 W
Reference Standard AEC-Q101

Compare IRFS4610PBF with alternatives

Compare NVB6411ANT4G with alternatives