IRFS4610PBF vs PSMN015-100YLX feature comparison

IRFS4610PBF Infineon Technologies AG

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PSMN015-100YLX Nexperia

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G2 SOP-8, 4 PIN
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Nexperia
Avalanche Energy Rating (Eas) 370 mJ 110 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 73 A 69 A
Drain-source On Resistance-Max 0.014 Ω 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB MO-235
JESD-30 Code R-PSSO-G2 R-PSSO-G4
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 290 A 274 A
Surface Mount YES YES
Terminal Finish MATTE TIN OVER NICKEL TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code SOIC
Pin Count 4
Manufacturer Package Code SOT669
Factory Lead Time 13 Weeks
Additional Feature AVALANCHE RATED
JESD-609 Code e3
Reference Standard IEC-60134

Compare IRFS4610PBF with alternatives

Compare PSMN015-100YLX with alternatives