Part Details for IRFR3910TRLPBF by Infineon Technologies AG
Overview of IRFR3910TRLPBF by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for IRFR3910TRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1750
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Newark | Mosfet, N-Ch, 100V, 16A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:16A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.115Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFR3910TRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3199 |
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$0.4740 / $0.8630 | Buy Now |
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DISTI #
IRFR3910TRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 16A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
27504 In Stock |
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$0.4447 / $1.1800 | Buy Now |
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DISTI #
IRFR3910TRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3910TRLPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4143 / $0.4734 | Buy Now |
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DISTI #
942-IRFR3910TRLPBF
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Mouser Electronics | MOSFET MOSFT 100V 15A 115mOhm 29.3nC RoHS: Compliant | 33913 |
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$0.4430 / $0.9800 | Buy Now |
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Future Electronics | Single N-Channel 100V 0.115 Ohm 44 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 402000Reel |
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$0.4000 / $0.4250 | Buy Now |
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Future Electronics | Single N-Channel 100V 0.115 Ohm 44 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 141000Reel |
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$0.4000 / $0.4250 | Buy Now |
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Rochester Electronics | IRFR3910 - HEXFET N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 72000 |
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$0.4402 / $0.5179 | Buy Now |
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Ameya Holding Limited | Min Qty: 3000 | 3500 |
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$0.6656 / $0.6862 | Buy Now |
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Ameya Holding Limited | Single N-Channel 100V 0.115 Ohm 44 nC HEXFET® Power Mosfet - TO-252AA | 16956 |
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RFQ | |
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DISTI #
SP001573318
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EBV Elektronik | Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R (Alt: SP001573318) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRFR3910TRLPBF
IRFR3910TRLPBF CAD Models
IRFR3910TRLPBF Part Data Attributes:
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IRFR3910TRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR3910TRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.115 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 79 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR3910TRLPBF
This table gives cross-reference parts and alternative options found for IRFR3910TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3910TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR3910PBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3910TRLPBF vs IRFR3910PBF |
| IRFR3910TRPBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3910TRLPBF vs IRFR3910TRPBF |
| IRFR3910 | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR3910TRLPBF vs IRFR3910 |
| IRFR3910TRRPBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3910TRLPBF vs IRFR3910TRRPBF |
| IRFR3910PBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3910TRLPBF vs IRFR3910PBF |
| IRFR3910 | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRFR3910TRLPBF vs IRFR3910 |
| IRFR3910TRR | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR3910TRLPBF vs IRFR3910TRR |
| IRFR3910TRPBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3910TRLPBF vs IRFR3910TRPBF |
| IRFR3910TRLPBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3910TRLPBF vs IRFR3910TRLPBF |