-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
39M3554
|
Newark | N Channel Mosfet, 100V, 16A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR3910TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.4840 / $1.1100 | Buy Now |
DISTI #
IRFR3910PBFCT-ND
|
DigiKey | MOSFET N-CH 100V 16A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
18899 In Stock |
|
$0.4043 / $1.0800 | Buy Now |
DISTI #
IRFR3910TRPBF
|
Avnet Americas | Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3910TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 2000 |
|
$0.3631 / $0.4439 | Buy Now |
DISTI #
IRFR3910TRPBF
|
Avnet Americas | Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3910TRPBF) RoHS: Compliant Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
942-IRFR3910TRPBF
|
Mouser Electronics | MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC RoHS: Compliant | 17066 |
|
$0.4040 / $1.0700 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 0.115 Ohm 44nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 80000Reel |
|
$0.3450 / $0.3700 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 0.115 Ohm 44nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel | 51Cut Tape/Mini-Reel |
|
$0.6400 / $0.9150 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 0.115 Ohm 44nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
|
$0.3450 / $0.3700 | Buy Now |
|
Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 172 |
|
$0.6658 / $1.3315 | Buy Now |
DISTI #
IRFR3910TRPBF
|
TME | Transistor: N-MOSFET, unipolar, 100V, 15A, 52W, DPAK Min Qty: 1 | 2436 |
|
$0.4150 / $1.0230 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRFR3910TRPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFR3910TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.115 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 79 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR3910TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3910TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR3910PBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3910TRPBF vs IRFR3910PBF |
IRFR3910 | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR3910TRPBF vs IRFR3910 |
IRFR3910TRRPBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3910TRPBF vs IRFR3910TRRPBF |
IRFR3910PBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3910TRPBF vs IRFR3910PBF |
IRFR3910 | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRFR3910TRPBF vs IRFR3910 |
IRFR3910TRR | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR3910TRPBF vs IRFR3910TRR |
IRFR3910TRPBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3910TRPBF vs IRFR3910TRPBF |
IRFR3910TRLPBF | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3910TRPBF vs IRFR3910TRLPBF |