Datasheets
IRFP360 by:

Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Details for IRFP360 by International Rectifier

Overview of IRFP360 by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFP360

Part # Distributor Description Stock Price Buy
Bristol Electronics   1185
RFQ
Bristol Electronics   1
RFQ
Bristol Electronics   Min Qty: 2 27
  • 2 $2.8000
  • 10 $1.8200
$1.8200 / $2.8000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-247AC 222
  • 1 $3.9600
  • 10 $1.9800
  • 102 $1.7160
$1.7160 / $3.9600 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-247AC 839
  • 1 $3.5600
  • 365 $1.4685
  • 682 $1.3350
$1.3350 / $3.5600 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-247AC 21
  • 1 $3.7500
  • 4 $2.5000
  • 11 $1.8750
$1.8750 / $3.7500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-247AC 1
  • 1 $11.7000
$11.7000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 35
  • 1 $5.0000
  • 100 $3.7500
  • 1,000 $3.2500
$3.2500 / $5.0000 Buy Now

Part Details for IRFP360

IRFP360 CAD Models

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IRFP360 Part Data Attributes

IRFP360 International Rectifier
Buy Now Datasheet
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IRFP360 International Rectifier Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 1200 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 280 W
Power Dissipation-Max (Abs) 280 W
Pulsed Drain Current-Max (IDM) 92 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP360

This table gives cross-reference parts and alternative options found for IRFP360. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP360, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix IRFP360 vs IRFP360PBF
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRFP360 vs IRFP360PBF
IRFP360 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix IRFP360 vs IRFP360
IRFP360 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Fairchild Semiconductor Corporation IRFP360 vs IRFP360
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRFP360 vs IRFP360PBF
Part Number Description Manufacturer Compare
IRFP360 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix IRFP360 vs IRFP360
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRFP360 vs IRFP360PBF
IRFM360-JQR-B Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors IRFP360 vs IRFM360-JQR-B
IRFM360-JQR-B 23A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFP360 vs IRFM360-JQR-B
IRFM360R1 23A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFP360 vs IRFM360R1
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRFP360 vs IRFP360PBF
IRFM360 23A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFP360 vs IRFM360
IRFM360R1 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors IRFP360 vs IRFM360R1
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix IRFP360 vs IRFP360PBF
IRFP360 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Fairchild Semiconductor Corporation IRFP360 vs IRFP360

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