Datasheets
IRFM350UPBF by: International Rectifier

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN

Part Details for IRFM350UPBF by International Rectifier

Overview of IRFM350UPBF by International Rectifier

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Applications Automotive

Part Details for IRFM350UPBF

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IRFM350UPBF Part Data Attributes

IRFM350UPBF International Rectifier
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IRFM350UPBF International Rectifier Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-254AA
Package Description FLANGE MOUNT, S-MSFM-P3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 700 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.415 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-MSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 225 ns

Alternate Parts for IRFM350UPBF

This table gives cross-reference parts and alternative options found for IRFM350UPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM350UPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N7227U Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier IRFM350UPBF vs 2N7227U
2N7227UPBF Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier IRFM350UPBF vs 2N7227UPBF
Part Number Description Manufacturer Compare
JANTXV2N7227U Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN Infineon Technologies AG IRFM350UPBF vs JANTXV2N7227U
IRFM350-JQR-B 14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited IRFM350UPBF vs IRFM350-JQR-B
IRFM350-QR-B 14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited IRFM350UPBF vs IRFM350-QR-B
JANTV2N7227 Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA Advanced Power Technology IRFM350UPBF vs JANTV2N7227
JANTXV2N7227 Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Advanced Power Technology IRFM350UPBF vs JANTXV2N7227
IRFM350 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Temic Semiconductors IRFM350UPBF vs IRFM350
2N7227U Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, ROHS COMPLIANT, U-PKG-3 Microsemi Corporation IRFM350UPBF vs 2N7227U
JANTX2N7227U Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN Infineon Technologies AG IRFM350UPBF vs JANTX2N7227U
2N7227 Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN Sensitron Semiconductors IRFM350UPBF vs 2N7227
IRFM350 Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG IRFM350UPBF vs IRFM350

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