Part Details for IRFM350-JQR-B by TT Electronics Power and Hybrid / Semelab Limited
Overview of IRFM350-JQR-B by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Part Details for IRFM350-JQR-B
IRFM350-JQR-B CAD Models
IRFM350-JQR-B Part Data Attributes
|
IRFM350-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
Buy Now
Datasheet
|
Compare Parts:
IRFM350-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SEMELAB LTD | |
Package Description | FLANGE MOUNT, S-MSFM-P3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH VOLTAGE | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.415 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IRFM350-JQR-B
This table gives cross-reference parts and alternative options found for IRFM350-JQR-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM350-JQR-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
JANTX2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Microsemi Corporation | IRFM350-JQR-B vs JANTX2N7227 |
JV2N7227 | 14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | Microsemi Corporation | IRFM350-JQR-B vs JV2N7227 |
IRFM350-JQR-BR1 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | IRFM350-JQR-B vs IRFM350-JQR-BR1 |
2N7227TX | Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRFM350-JQR-B vs 2N7227TX |
JANX2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Advanced Power Technology | IRFM350-JQR-B vs JANX2N7227 |
JANTXV2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Semicoa Semiconductors | IRFM350-JQR-B vs JANTXV2N7227 |
2N7227R1 | Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | TT Electronics Resistors | IRFM350-JQR-B vs 2N7227R1 |
JANTX2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | International Rectifier | IRFM350-JQR-B vs JANTX2N7227 |
2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN | Sensitron Semiconductors | IRFM350-JQR-B vs 2N7227 |
JANTXV2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Advanced Power Technology | IRFM350-JQR-B vs JANTXV2N7227 |