IRFD210
vs
IRFD211
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
MOTOROLA INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
150 V
|
| Drain Current-Max (ID) |
0.6 A
|
0.6 A
|
| Drain-source On Resistance-Max |
1.5 Ω
|
0.8 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDIP-T3
|
R-PDIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Package Description |
|
IN-LINE, R-PDIP-T3
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.29.00.95
|
| Feedback Cap-Max (Crss) |
|
25 pF
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation Ambient-Max |
|
1 W
|
| Power Dissipation-Max (Abs) |
|
1 W
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare IRFD210 with alternatives
Compare IRFD211 with alternatives