Part Details for IRF9512 by Intersil Corporation
Overview of IRF9512 by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF9512
IRF9512 CAD Models
IRF9512 Part Data Attributes
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IRF9512
Intersil Corporation
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Datasheet
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IRF9512
Intersil Corporation
2.5A, 100V, 1.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERSIL CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 190 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 20 W | |
Power Dissipation-Max (Abs) | 20 W | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 80 ns | |
Turn-on Time-Max (ton) | 90 ns |
Alternate Parts for IRF9512
This table gives cross-reference parts and alternative options found for IRF9512. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9512, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF9512-009 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF9512 vs IRF9512-009 |
IRF9512-006 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF9512 vs IRF9512-006 |
RFP2P10 | Power Field-Effect Transistor, 2A I(D), 100V, 3.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF9512 vs RFP2P10 |
IRF9512 | 2.5A, 100V, 1.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF9512 vs IRF9512 |
RFP2P10 | 2A, 100V, 3.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF9512 vs RFP2P10 |
IRF9512-001 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF9512 vs IRF9512-001 |