Part Details for RFP2P10 by Harris Semiconductor
Overview of RFP2P10 by Harris Semiconductor
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFP2P10
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFP2P10-ND
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DigiKey | P-CHANNEL POWER MOSFET Min Qty: 592 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
11516 In Stock |
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$0.5100 | Buy Now |
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Bristol Electronics | 792 |
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RFQ | ||
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Bristol Electronics | 49 |
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RFQ | ||
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Quest Components | 3 |
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$1.6352 / $2.0440 | Buy Now | |
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Quest Components | 633 |
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$0.9812 / $2.4530 | Buy Now | |
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Rochester Electronics | 2A, 100V, 3.5ohm, P-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 11516 |
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$0.4351 / $0.5119 | Buy Now |
Part Details for RFP2P10
RFP2P10 CAD Models
RFP2P10 Part Data Attributes
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RFP2P10
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFP2P10
Harris Semiconductor
Power Field-Effect Transistor, 2A I(D), 100V, 3.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 30 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 25 W | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 5 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 70 ns | |
| Turn-on Time-Max (ton) | 70 ns |
Alternate Parts for RFP2P10
This table gives cross-reference parts and alternative options found for RFP2P10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP2P10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9512 | Power Field-Effect Transistor, 5A I(D), 100V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | RFP2P10 vs IRF9512 |
| IRF9512-006 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | RFP2P10 vs IRF9512-006 |
| IRF9512-010 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | RFP2P10 vs IRF9512-010 |
| IRF9512 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | RFP2P10 vs IRF9512 |