Manufacturer | Description | Price Range | Set Alert | Details |
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Harris Semiconductor | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | $1.1600 / $1.3700 |
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Vishay Intertechnologies | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN |
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International Rectifier | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | $0.7200 / $3.6000 |
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New Jersey Semiconductor Products, Inc. | $2.0572 / $5.0176 |
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Vishay Siliconix | Transistor | $0.7200 / $1.8000 |
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New Jersey Semiconductor Products Inc | MOSFET Transistor, P-Channel, TO-220AB | $2.9120 / $6.7200 |
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Guangdong Kexin Industrial Co Ltd |
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Rochester Electronics LLC | 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Thomson Consumer Electronics | Transistor |
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Samsung Semiconductor | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Intersil Corporation | 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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