Part Details for IRF823 by Harris Semiconductor
Overview of IRF823 by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF823
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRF823-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 683 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2284 In Stock |
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$0.4400 | Buy Now |
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Rochester Electronics | 2.2A, 450V, 4.0 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2284 |
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$0.3771 / $0.4436 | Buy Now |
Part Details for IRF823
IRF823 CAD Models
IRF823 Part Data Attributes:
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IRF823
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRF823
Harris Semiconductor
Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 450 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 50 W | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 7 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 60 ns | |
Turn-on Time-Max (ton) | 33 ns |
Alternate Parts for IRF823
This table gives cross-reference parts and alternative options found for IRF823. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF823, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MTP1N45 | Power Field-Effect Transistor, 1A I(D), 450V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF823 vs MTP1N45 |
2SK2019-01 | Power Field-Effect Transistor, 3.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | IRF823 vs 2SK2019-01 |
IRF821 | 2.5A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF823 vs IRF821 |
IRF823 | Power Field-Effect Transistor, 2.2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF823 vs IRF823 |
BUZ74 | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | IRF823 vs BUZ74 |
STP4NB50 | 3.8A, 500V, 2.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IRF823 vs STP4NB50 |
IRF823 | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2A I(D),TO-220AB | Intersil Corporation | IRF823 vs IRF823 |
BUK454-500B | TRANSISTOR 3.3 A, 500 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRF823 vs BUK454-500B |
IRF821-009 | Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF823 vs IRF821-009 |
MTP3N50E | 3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | onsemi | IRF823 vs MTP3N50E |