Part Details for MTP1N45 by Motorola Semiconductor Products
Overview of MTP1N45 by Motorola Semiconductor Products
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part Details for MTP1N45
MTP1N45 CAD Models
MTP1N45 Part Data Attributes:
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MTP1N45
Motorola Semiconductor Products
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Datasheet
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MTP1N45
Motorola Semiconductor Products
Power Field-Effect Transistor, 1A I(D), 450V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 450 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 50 W | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 65 ns | |
| Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for MTP1N45
This table gives cross-reference parts and alternative options found for MTP1N45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP1N45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK2019-01 | Power Field-Effect Transistor, 3.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | MTP1N45 vs 2SK2019-01 |
| IRF821 | 2.5A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | MTP1N45 vs IRF821 |
| IRF823 | Power Field-Effect Transistor, 2.2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | MTP1N45 vs IRF823 |
| BUZ74 | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | MTP1N45 vs BUZ74 |
| STP4NB50 | 3.8A, 500V, 2.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | MTP1N45 vs STP4NB50 |
| IRF823 | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2A I(D),TO-220AB | Intersil Corporation | MTP1N45 vs IRF823 |
| BUK454-500B | TRANSISTOR 3.3 A, 500 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | MTP1N45 vs BUK454-500B |
| IRF821-009 | Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP1N45 vs IRF821-009 |
| MTP3N50E | 3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | onsemi | MTP1N45 vs MTP3N50E |
| IRF821 | Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | MTP1N45 vs IRF821 |