Datasheets
IRF821-009 by:

Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for IRF821-009 by International Rectifier

Overview of IRF821-009 by International Rectifier

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Applications Energy and Power Systems Renewable Energy

Part Details for IRF821-009

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IRF821-009 Part Data Attributes:

IRF821-009 International Rectifier
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IRF821-009 International Rectifier Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 450 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRF821-009

This table gives cross-reference parts and alternative options found for IRF821-009. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF821-009, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF821-006 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF821-009 vs IRF821-006
MTP1N50 1A, 500V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF821-009 vs MTP1N50
IRF821-001 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF821-009 vs IRF821-001
MTP2N45 2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF821-009 vs MTP2N45
IRF823 2.2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF821-009 vs IRF823
MTP3N45 3A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF821-009 vs MTP3N45
IRF821 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF821-009 vs IRF821
IRF821 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF821-009 vs IRF821
IRF823 Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF821-009 vs IRF823
IRF822 Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF821-009 vs IRF822
Part Number Description Manufacturer Compare
IRF820 2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF821-009 vs IRF820
IRF821-006 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF821-009 vs IRF821-006
IRF820 Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF821-009 vs IRF820
MTP3N45 3A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF821-009 vs MTP3N45
IRF821 TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2.5A I(D),TO-220AB Intersil Corporation IRF821-009 vs IRF821
IRF822 Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF821-009 vs IRF822
MTP1N50 1A, 500V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF821-009 vs MTP1N50
IRF822 Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF821-009 vs IRF822
IRF823 2.2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF821-009 vs IRF823
BUZ74 Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRF821-009 vs BUZ74

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