Part Details for IRF822 by Samsung Semiconductor
Overview of IRF822 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRF822
IRF822 CAD Models
IRF822 Part Data Attributes:
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IRF822
Samsung Semiconductor
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Datasheet
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IRF822
Samsung Semiconductor
Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SFM | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 2.2 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 50 W | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 7 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 60 ns | |
| Turn-on Time-Max (ton) | 33 ns |
Alternate Parts for IRF822
This table gives cross-reference parts and alternative options found for IRF822. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF822, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTP1N45 | Power Field-Effect Transistor, 1A I(D), 450V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF822 vs MTP1N45 |
| 2SK2019-01 | Power Field-Effect Transistor, 3.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | IRF822 vs 2SK2019-01 |
| IRF821 | 2.5A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF822 vs IRF821 |
| IRF823 | Power Field-Effect Transistor, 2.2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF822 vs IRF823 |
| BUZ74 | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | IRF822 vs BUZ74 |
| STP4NB50 | 3.8A, 500V, 2.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IRF822 vs STP4NB50 |
| IRF823 | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2A I(D),TO-220AB | Intersil Corporation | IRF822 vs IRF823 |
| BUK454-500B | TRANSISTOR 3.3 A, 500 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRF822 vs BUK454-500B |
| IRF821-009 | Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF822 vs IRF821-009 |
| MTP3N50E | 3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | onsemi | IRF822 vs MTP3N50E |