There are no models available for this part yet.
Overview of IRF640STRL by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRF640STRL by Vishay Intertechnologies
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IRF640STRL
|
Avnet Americas | MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRF640STRL) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Container: Reel | 0 |
|
RFQ | ||
| Bristol Electronics | 220 |
|
RFQ | ||||
| Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 176 |
|
$4.2994 / $6.9720 | Buy Now |
CAD Models for IRF640STRL by Vishay Intertechnologies
Part Data Attributes for IRF640STRL by Vishay Intertechnologies
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
|
Package Description
|
PLASTIC, D2PAK-3
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Additional Feature
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AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
580 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
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|
DS Breakdown Voltage-Min
|
200 V
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Drain Current-Max (ID)
|
18 A
|
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Drain-source On Resistance-Max
|
0.18 Ω
|
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
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JESD-30 Code
|
R-PSSO-G2
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
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PLASTIC/EPOXY
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|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
130 W
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|
Pulsed Drain Current-Max (IDM)
|
72 A
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|
Qualification Status
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Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
|
Alternate Parts for IRF640STRL
This table gives cross-reference parts and alternative options found for IRF640STRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640STRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF640STRLPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF640STRL vs IRF640STRLPBF |
| IRF640STRL | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF640STRL vs IRF640STRL |
| IRF640S/T3 | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power | NXP Semiconductors | IRF640STRL vs IRF640S/T3 |
| IRF640STRRPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRF640STRL vs IRF640STRRPBF |
| IRF640S | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power | NXP Semiconductors | IRF640STRL vs IRF640S |
| SIHF640S-GE3 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Intertechnologies | IRF640STRL vs SIHF640S-GE3 |
| IRF640SPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRF640STRL vs IRF640SPBF |
| IRF640STRLPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF640STRL vs IRF640STRLPBF |
| IRF640SPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF640STRL vs IRF640SPBF |
| IRF640STRL | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF640STRL vs IRF640STRL |
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