Datasheets
IRF621 by:

5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

Part Details for IRF621 by STMicroelectronics

Overview of IRF621 by STMicroelectronics

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Applications Industrial Automation Motor control systems

Price & Stock for IRF621

Part # Distributor Description Stock Price Buy
Quest Components   100
  • 1 $2.7840
  • 44 $1.5312
  • 99 $1.3920
$1.3920 / $2.7840 Buy Now

Part Details for IRF621

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IRF621 Part Data Attributes

IRF621 STMicroelectronics
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IRF621 STMicroelectronics 5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SFM
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature FAST SWITCHING
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF621

This table gives cross-reference parts and alternative options found for IRF621. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF621, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF621 Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF621 vs IRF621
IRF623 4A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF621 vs IRF623
IRF621 Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF621 vs IRF621
IRF623-009 Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF621 vs IRF623-009
IRF623-001 Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF621 vs IRF623-001
BUZ73A Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF621 vs BUZ73A
IRF622 Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF621 vs IRF622
IRF623-006 Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF621 vs IRF623-006
IRF623 4A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF621 vs IRF623
BUZ73A 5.8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF621 vs BUZ73A
Part Number Description Manufacturer Compare
BUZ73A 5.8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF621 vs BUZ73A
IRF622 Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF621 vs IRF622
IRF620-010 Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF621 vs IRF620-010
IRF620-006 Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF621 vs IRF620-006
IRF623 Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF621 vs IRF623
IRF622 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics IRF621 vs IRF622
IRF620 Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF621 vs IRF620
IRF623 Power Field-Effect Transistor, 4A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF621 vs IRF623
IRF621 Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF621 vs IRF621
PHP5N20E TRANSISTOR 5 A, 200 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors IRF621 vs PHP5N20E

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