Part Details for IRF621 by Samsung Semiconductor
Overview of IRF621 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF621
IRF621 CAD Models
IRF621 Part Data Attributes
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IRF621
Samsung Semiconductor
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Datasheet
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IRF621
Samsung Semiconductor
Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | SFM | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 85 mJ | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 40 W | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 160 ns | |
Turn-on Time-Max (ton) | 100 ns |
Alternate Parts for IRF621
This table gives cross-reference parts and alternative options found for IRF621. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF621, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF621 | Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF621 vs IRF621 |
IRF621 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Advanced Microelectronic Products Inc | IRF621 vs IRF621 |
IRF622 | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,4A I(D),TO-220AB | National Semiconductor Corporation | IRF621 vs IRF622 |
IRF623 | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,4A I(D),TO-220AB | Diodes Incorporated | IRF621 vs IRF623 |
IRF623 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Zetex / Diodes Inc | IRF621 vs IRF623 |
IRF622 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Advanced Microelectronic Products Inc | IRF621 vs IRF622 |
IRF622 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | IRF621 vs IRF622 |
IRF622 | Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF621 vs IRF622 |
IRF622 | Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF621 vs IRF622 |
IRF623 | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,4A I(D),TO-220AB | National Semiconductor Corporation | IRF621 vs IRF623 |