Datasheets
IRF621 by:

Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IRF621 by Samsung Semiconductor

Overview of IRF621 by Samsung Semiconductor

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Applications Industrial Automation Motor control systems

Part Details for IRF621

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IRF621 Part Data Attributes

IRF621 Samsung Semiconductor
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IRF621 Samsung Semiconductor Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code SFM
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 85 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 40 W
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 160 ns
Turn-on Time-Max (ton) 100 ns

Alternate Parts for IRF621

This table gives cross-reference parts and alternative options found for IRF621. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF621, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF621 Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF621 vs IRF621
IRF621 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Advanced Microelectronic Products Inc IRF621 vs IRF621
IRF622 TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,4A I(D),TO-220AB National Semiconductor Corporation IRF621 vs IRF622
IRF623 TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,4A I(D),TO-220AB Diodes Incorporated IRF621 vs IRF623
IRF623 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Zetex / Diodes Inc IRF621 vs IRF623
IRF622 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Advanced Microelectronic Products Inc IRF621 vs IRF622
IRF622 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Thomson Consumer Electronics IRF621 vs IRF622
IRF622 Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF621 vs IRF622
IRF622 Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF621 vs IRF622
IRF623 TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,4A I(D),TO-220AB National Semiconductor Corporation IRF621 vs IRF623
Part Number Description Manufacturer Compare
IRF620 5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF621 vs IRF620
IRF621 5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF621 vs IRF621
IRF621 5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF621 vs IRF621
PHP5N20E TRANSISTOR 5 A, 200 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors IRF621 vs PHP5N20E
IRF623-001 Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF621 vs IRF623-001
IRF622 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF621 vs IRF622
IRF623 4A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics IRF621 vs IRF623
IRF620-009 Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF621 vs IRF620-009
IRF623-010 Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF621 vs IRF623-010
BUZ73A 5.8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF621 vs BUZ73A

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