IRF5M3710SCV
vs
IPD25CN10NGXT
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
HERMETIC SEALED PACKAGE-3
|
GREEN, PLASTIC PACKAGE-3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
350 mJ
|
65 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
35 A
|
35 A
|
| Drain-source On Resistance-Max |
0.03 Ω
|
0.025 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-254AA
|
TO-252
|
| JESD-30 Code |
S-MSFM-P3
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
140 A
|
140 A
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
PIN/PEG
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Case Connection |
|
DRAIN
|
| Operating Temperature-Max |
|
175 °C
|
|
|
|
Compare IRF5M3710SCV with alternatives
Compare IPD25CN10NGXT with alternatives