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Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97K2081
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Newark | Mosfet, N, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:41A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.036Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Pd:170W, Rohs Compliant: Yes |Infineon IRF1310NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1123 |
|
$0.9240 / $1.9500 | Buy Now |
DISTI #
IRF1310NPBF-ND
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DigiKey | MOSFET N-CH 100V 42A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
607 In Stock |
|
$0.7362 / $1.7500 | Buy Now |
DISTI #
IRF1310NPBF
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Avnet Americas | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1310NPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.6626 / $0.8098 | Buy Now |
DISTI #
97K2081
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Avnet Americas | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 97K2081) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 574 Partner Stock |
|
$1.0000 / $1.9500 | Buy Now |
DISTI #
942-IRF1310NPBF
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Mouser Electronics | MOSFET MOSFT 100V 42A 36mOhm 73.3nC RoHS: Compliant | 3887 |
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$0.7360 / $1.7500 | Buy Now |
DISTI #
E02:0323_00176893
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Arrow Electronics | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2408 | Europe - 2540 |
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$0.6056 / $1.2504 | Buy Now |
DISTI #
V36:1790_13891264
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Arrow Electronics | Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2345 | Americas - 886 |
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$0.7325 / $1.7073 | Buy Now |
DISTI #
70016939
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.036Ohm, ID 42A, TO-220AB, PD 160W, VGS +/-20V | Infineon IRF1310NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.4900 / $1.7500 | RFQ |
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Future Electronics | Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 250Tube |
|
$0.4000 / $0.4700 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.6350 / $0.7550 | Buy Now |
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IRF1310NPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRF1310NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 420 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 42 A | |
Drain-source On Resistance-Max | 0.036 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 160 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF1310NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1310NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF1310N | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF1310NPBF vs IRF1310N |
IRF1310NPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF1310NPBF vs IRF1310NPBF |
IRF1310N | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRF1310NPBF vs IRF1310N |
IRF1310NHR | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF1310NPBF vs IRF1310NHR |