Datasheets
IRF1310N by:

Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IRF1310N by Infineon Technologies AG

Overview of IRF1310N by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRF1310N

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IRF1310N Part Data Attributes:

IRF1310N Infineon Technologies AG
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IRF1310N Infineon Technologies AG Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 420 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1310N

This table gives cross-reference parts and alternative options found for IRF1310N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1310N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF1310NHR Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF1310N vs IRF1310NHR
IRF1310NPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF1310N vs IRF1310NPBF
Part Number Description Manufacturer Compare
STW50N10 50A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics IRF1310N vs STW50N10
RFG40N10 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC IRF1310N vs RFG40N10
IRFP150N Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN International Rectifier IRF1310N vs IRFP150N
RFG40N10 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRF1310N vs RFG40N10
SGSP471 30A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics IRF1310N vs SGSP471
RFG40N10 Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor IRF1310N vs RFG40N10
IRFP150NPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRF1310N vs IRFP150NPBF
IRF1310NHR Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF1310N vs IRF1310NHR
MTH40N08 40A, 80V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC Motorola Mobility LLC IRF1310N vs MTH40N08
SMW60N10 Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Vishay Siliconix IRF1310N vs SMW60N10

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