IPL65R070C7
vs
SIHG33N65EF-GE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
VSON-4
|
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Infineon
|
Vishay
|
| Avalanche Energy Rating (Eas) |
171 mJ
|
508 mJ
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
650 V
|
650 V
|
| Drain Current-Max (ID) |
28 A
|
31.6 A
|
| Drain-source On Resistance-Max |
0.07 Ω
|
0.109 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PSSO-N4
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
2A
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
145 A
|
93 A
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
NO LEAD
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Factory Lead Time |
|
18 Weeks
|
| JEDEC-95 Code |
|
TO-247AC
|
|
|
|
Compare IPL65R070C7 with alternatives
Compare SIHG33N65EF-GE3 with alternatives