Part Details for IPD135N03LGHF by Infineon Technologies AG
Overview of IPD135N03LGHF by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IPD135N03LGHF
IPD135N03LGHF CAD Models
IPD135N03LGHF Part Data Attributes:
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IPD135N03LGHF
Infineon Technologies AG
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Datasheet
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IPD135N03LGHF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TO-252, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.0135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 210 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPD135N03LGHF
This table gives cross-reference parts and alternative options found for IPD135N03LGHF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD135N03LGHF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RJK0365DPA-02-J0 | 30A, 30V, 0.0127ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN AND LEAD FREE, WPAK(2), 8 PIN | Renesas Electronics Corporation | IPD135N03LGHF vs RJK0365DPA-02-J0 |
RJK03M6DPA-00#J5A | N Channel Power MOSFET, WPAK(3F), /Embossed Tape | Renesas Electronics Corporation | IPD135N03LGHF vs RJK03M6DPA-00#J5A |
IPD12N03LBG | Power Field-Effect Transistor, 30A I(D), 30V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD135N03LGHF vs IPD12N03LBG |
RJK03M6DPA-00-J5A | 30A, 30V, 0.0126ohm, N-CHANNEL, Si, POWER, MOSFET, HALOFEN AND LEAD FREE, WPAK(3F), 8 PIN | Renesas Electronics Corporation | IPD135N03LGHF vs RJK03M6DPA-00-J5A |
RJK0365DPA-02#J0B | N Channel Power MOSFET, WPAK(3F), /Embossed Tape | Renesas Electronics Corporation | IPD135N03LGHF vs RJK0365DPA-02#J0B |
IRFR3708 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IPD135N03LGHF vs IRFR3708 |