Part Details for IRFR3708 by Infineon Technologies AG
Overview of IRFR3708 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFR3708
IRFR3708 CAD Models
IRFR3708 Part Data Attributes:
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IRFR3708
Infineon Technologies AG
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Datasheet
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IRFR3708
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 213 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.0125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 244 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFR3708
This table gives cross-reference parts and alternative options found for IRFR3708. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3708, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RJK0365DPA-02-J0 | 30A, 30V, 0.0127ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN AND LEAD FREE, WPAK(2), 8 PIN | Renesas Electronics Corporation | IRFR3708 vs RJK0365DPA-02-J0 |
RJK03M6DPA-00#J5A | N Channel Power MOSFET, WPAK(3F), /Embossed Tape | Renesas Electronics Corporation | IRFR3708 vs RJK03M6DPA-00#J5A |
IPD12N03LBG | Power Field-Effect Transistor, 30A I(D), 30V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IRFR3708 vs IPD12N03LBG |
RJK03M6DPA-00-J5A | 30A, 30V, 0.0126ohm, N-CHANNEL, Si, POWER, MOSFET, HALOFEN AND LEAD FREE, WPAK(3F), 8 PIN | Renesas Electronics Corporation | IRFR3708 vs RJK03M6DPA-00-J5A |
RJK0365DPA-02#J0B | N Channel Power MOSFET, WPAK(3F), /Embossed Tape | Renesas Electronics Corporation | IRFR3708 vs RJK0365DPA-02#J0B |