Memory
HY51V65173HGLT-6
SK Hynix Inc
Description: EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Overview of HY51V65173HGLT-6 by SK Hynix Inc

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Part Data Attributes for HY51V65173HGLT-6 by SK Hynix Inc

HY51V65173HGLT-6
SK Hynix Inc
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SK HYNIX INC
Part Package Code
TSOP2
Package Description
TSOP2,
Pin Count
50
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FAST PAGE WITH EDO
Access Time-Max
60 ns
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH
JESD-30 Code
R-PDSO-G50
JESD-609 Code
e6
Length
20.95 mm
Memory Density
67108864 bit
Memory IC Type
EDO DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
50
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
4MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN BISMUTH
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. HY51V65173HGLT-6
    SK Hynix Inc
    EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
    VS

Alternate Parts for HY51V65173HGLT-6

This table gives cross-reference parts and alternative options found for HY51V65173HGLT-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY51V65173HGLT-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HYB3166165AT-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50 Siemens HY51V65173HGLT-6 vs HYB3166165AT-60
IS41LV16400-60TE EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc HY51V65173HGLT-6 vs IS41LV16400-60TE
HYB3166165BT-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Siemens HY51V65173HGLT-6 vs HYB3166165BT-60
HY51V65164LTC-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 SK Hynix Inc HY51V65173HGLT-6 vs HY51V65164LTC-60
KM416V4104BS-L6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6 vs KM416V4104BS-L6
VG26V64165BT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HY51V65173HGLT-6 vs VG26V64165BT-6
KM416V4004AS-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6 vs KM416V4004AS-6
K4E641612C-TL600 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6 vs K4E641612C-TL600
K4E641612B-TL60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6 vs K4E641612B-TL60
HYB3166165BT-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG HY51V65173HGLT-6 vs HYB3166165BT-60
Part Number Description Manufacturer Compare
VG26V65160BT-4 Fast Page DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HY51V65173HGLT-6 vs VG26V65160BT-4
HYB3164165AT-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG HY51V65173HGLT-6 vs HYB3164165AT-60
KM416V4000A-6 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6 vs KM416V4000A-6
K4F641611C-TC600 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6 vs K4F641611C-TC600
HM5165165LTT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Hitachi Ltd HY51V65173HGLT-6 vs HM5165165LTT-6
KM416V4004BS-L5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6 vs KM416V4004BS-L5
VG26V64165BT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HY51V65173HGLT-6 vs VG26V64165BT-6
K4F661612D-TL60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6 vs K4F661612D-TL60
HM5165165FLTT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc HY51V65173HGLT-6 vs HM5165165FLTT-6
HYB3165165BT-40 EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Siemens HY51V65173HGLT-6 vs HYB3165165BT-40

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