Memory
K4F641611C-TC600
Samsung Semiconductor
Description: Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Overview of K4F641611C-TC600 by Samsung Semiconductor

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Part Data Attributes for K4F641611C-TC600 by Samsung Semiconductor

K4F641611C-TC600
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSOP2,
Pin Count
50
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FAST PAGE
Access Time-Max
60 ns
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code
R-PDSO-G50
Length
20.95 mm
Memory Density
67108864 bit
Memory IC Type
FAST PAGE DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
50
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
4MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel)
240
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Width
10.16 mm
Want to compare parts?
  1. K4F641611C-TC600
    Samsung Semiconductor
    Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
    VS

Alternate Parts for K4F641611C-TC600

This table gives cross-reference parts and alternative options found for K4F641611C-TC600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4F641611C-TC600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4F661611D-TC600 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs K4F661611D-TC600
KM416C4000BS-6 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs KM416C4000BS-6
K4F661611B-TC600 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs K4F661611B-TC600
K4F661611C-TC60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs K4F661611C-TC60
K4F661611B-TC60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs K4F661611B-TC60
K4F641611C-TC60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs K4F641611C-TC60
K4F641611D-TC600 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs K4F641611D-TC600
KM416C4100BS-6 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs KM416C4100BS-6
Part Number Description Manufacturer Compare
VG26V65160BT-4 Fast Page DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation K4F641611C-TC600 vs VG26V65160BT-4
HYB3164165AT-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG K4F641611C-TC600 vs HYB3164165AT-60
HY51V65173HGLT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 SK Hynix Inc K4F641611C-TC600 vs HY51V65173HGLT-6
KM416V4000A-6 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs KM416V4000A-6
HM5165165LTT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Hitachi Ltd K4F641611C-TC600 vs HM5165165LTT-6
KM416V4004BS-L5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs KM416V4004BS-L5
VG26V64165BT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation K4F641611C-TC600 vs VG26V64165BT-6
K4F661612D-TL60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor K4F641611C-TC600 vs K4F661612D-TL60
HM5165165FLTT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc K4F641611C-TC600 vs HM5165165FLTT-6
HYB3165165BT-40 EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Siemens K4F641611C-TC600 vs HYB3165165BT-40

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