Datasheets
HUF75309D3 by:

17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Part Details for HUF75309D3 by Rochester Electronics LLC

Overview of HUF75309D3 by Rochester Electronics LLC

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Part Details for HUF75309D3

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HUF75309D3 Part Data Attributes:

HUF75309D3 Rochester Electronics LLC
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HUF75309D3 Rochester Electronics LLC 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75309D3

This table gives cross-reference parts and alternative options found for HUF75309D3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75309D3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75309D3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Fairchild Semiconductor Corporation HUF75309D3 vs HUF75309D3
HUF75309D3 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation HUF75309D3 vs HUF75309D3
Part Number Description Manufacturer Compare
BUZ101SL Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens HUF75309D3 vs BUZ101SL
HUF76429D3ST 20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75309D3 vs HUF76429D3ST
934054570118 TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3, FET General Purpose Power NXP Semiconductors HUF75309D3 vs 934054570118
IRF9Z34STRLPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix HUF75309D3 vs IRF9Z34STRLPBF
IRFR1205TRPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier HUF75309D3 vs IRFR1205TRPBF
IRF9Z34NSPBF Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HUF75309D3 vs IRF9Z34NSPBF
HUF75309D3ST 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF75309D3 vs HUF75309D3ST
NTD18N06T4G 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 Rochester Electronics LLC HUF75309D3 vs NTD18N06T4G
HUFA75321D3ST 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75309D3 vs HUFA75321D3ST
NTD18N06LG 18A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 Rochester Electronics LLC HUF75309D3 vs NTD18N06LG

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