Part Details for HUF75309D3 by Fairchild Semiconductor Corporation
Overview of HUF75309D3 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HUF75309D3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Chip1Cloud | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs | 6430 |
|
RFQ |
Part Details for HUF75309D3
HUF75309D3 CAD Models
HUF75309D3 Part Data Attributes:
|
HUF75309D3
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
HUF75309D3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 19 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 55 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for HUF75309D3
This table gives cross-reference parts and alternative options found for HUF75309D3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75309D3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR024NTR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | HUF75309D3 vs IRFR024NTR |
RFD14N06L | 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | HUF75309D3 vs RFD14N06L |
RFP14N05L | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | HUF75309D3 vs RFP14N05L |
NTD3055L170-1G | Single N-Channel Logic Level Power MOSFET 60V, 9A, 170mΩ, DPAK INSERTION MOUNT, 75-TUBE | onsemi | HUF75309D3 vs NTD3055L170-1G |
BUK553-60B | TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | HUF75309D3 vs BUK553-60B |
BUZ71 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | HUF75309D3 vs BUZ71 |
IRFZ30 | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | HUF75309D3 vs IRFZ30 |
HUF76429D3S | Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | HUF75309D3 vs HUF76429D3S |
RFD14N05 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | HUF75309D3 vs RFD14N05 |
STD20NE06 | 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | STMicroelectronics | HUF75309D3 vs STD20NE06 |