HGT1S12N60C3DS9A
Description: Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB

Overview of HGT1S12N60C3DS9A by Fairchild Semiconductor Corporation

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Part Data Attributes for HGT1S12N60C3DS9A by Fairchild Semiconductor Corporation

HGT1S12N60C3DS9A
Fairchild Semiconductor Corporation
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
24 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf)
275 ns
Gate-Emitter Thr Voltage-Max
6 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
104 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
480 ns
Turn-on Time-Nom (ton)
48 ns
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  1. HGT1S12N60C3DS9A
    Fairchild Semiconductor Corporation
    Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    VS

Alternate Parts for HGT1S12N60C3DS9A

This table gives cross-reference parts and alternative options found for HGT1S12N60C3DS9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60C3DS9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HGT1S12N60C3DS9A 24A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S12N60C3DS9A vs HGT1S12N60C3DS9A
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation HGT1S12N60C3DS9A vs SGP13N60UF
IXGH25N100U1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc HGT1S12N60C3DS9A vs IXGH25N100U1
HGTG40N60B3_NL Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGT1S12N60C3DS9A vs HGTG40N60B3_NL
IRG4PC30FPBF Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 Infineon Technologies AG HGT1S12N60C3DS9A vs IRG4PC30FPBF
IRGPS40B120U Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN International Rectifier HGT1S12N60C3DS9A vs IRGPS40B120U
HGTP15N50C1 Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor HGT1S12N60C3DS9A vs HGTP15N50C1
IRG4BC30U-SPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HGT1S12N60C3DS9A vs IRG4BC30U-SPBF
IXGH32N60B Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGT1S12N60C3DS9A vs IXGH32N60B
IRG4BC15UD-SPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG HGT1S12N60C3DS9A vs IRG4BC15UD-SPBF
HGTP6N50E1D Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation HGT1S12N60C3DS9A vs HGTP6N50E1D

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