Datasheets
HGT1S12N60B3S9A by:

27A, 600V, N-CHANNEL IGBT, TO-263AB

Part Details for HGT1S12N60B3S9A by Intersil Corporation

Overview of HGT1S12N60B3S9A by Intersil Corporation

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Part Details for HGT1S12N60B3S9A

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HGT1S12N60B3S9A Part Data Attributes:

HGT1S12N60B3S9A Intersil Corporation
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HGT1S12N60B3S9A Intersil Corporation 27A, 600V, N-CHANNEL IGBT, TO-263AB
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 27 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 392 ns
Turn-on Time-Nom (ton) 45 ns

Alternate Parts for HGT1S12N60B3S9A

This table gives cross-reference parts and alternative options found for HGT1S12N60B3S9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60B3S9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S12N60B3S Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation HGT1S12N60B3S9A vs HGT1S12N60B3S
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation HGT1S12N60B3S9A vs HGT1S12N60B3S9A
HGT1S12N60B3S 27A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 Intersil Corporation HGT1S12N60B3S9A vs HGT1S12N60B3S
Part Number Description Manufacturer Compare
HGTG30N60C3D Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247, Fairchild Semiconductor Corporation HGT1S12N60B3S9A vs HGTG30N60C3D
HGTG30N120CN 30A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGT1S12N60B3S9A vs HGTG30N120CN
HGTG20N60B3D 40A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGT1S12N60B3S9A vs HGTG20N60B3D
HGTP7N60B3D 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGT1S12N60B3S9A vs HGTP7N60B3D
IRG4PC50FPBF Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier HGT1S12N60B3S9A vs IRG4PC50FPBF
HGTP11N120CN 43A, 1200V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGT1S12N60B3S9A vs HGTP11N120CN
IRG4PC30UDPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGT1S12N60B3S9A vs IRG4PC30UDPBF
HGTG20N60B3 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247. 3 PIN Fairchild Semiconductor Corporation HGT1S12N60B3S9A vs HGTG20N60B3
HGT1S5N120BNS9A 21A, 1200V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S12N60B3S9A vs HGT1S5N120BNS9A
HGTP3N60C3DR 6A, 600V, N-CHANNEL IGBT, TO-220AB, PLASTIC PACKAGE-3 Intersil Corporation HGT1S12N60B3S9A vs HGTP3N60C3DR

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