Datasheets
H55S2532JFR-60M by: SK Hynix Inc

Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-90

Part Details for H55S2532JFR-60M by SK Hynix Inc

Overview of H55S2532JFR-60M by SK Hynix Inc

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Applications Computing and Data Storage

Part Details for H55S2532JFR-60M

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H55S2532JFR-60M Part Data Attributes

H55S2532JFR-60M SK Hynix Inc
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H55S2532JFR-60M SK Hynix Inc Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-90
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code BGA
Package Description VFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e1
Length 13 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -30 °C
Organization 8MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.00001 A
Supply Current-Max 0.1 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 8 mm

Alternate Parts for H55S2532JFR-60M

This table gives cross-reference parts and alternative options found for H55S2532JFR-60M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H55S2532JFR-60M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT48H8M32LFB5-75 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc H55S2532JFR-60M vs MT48H8M32LFB5-75
IS42VM32800D-75BLI Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90 Integrated Silicon Solution Inc H55S2532JFR-60M vs IS42VM32800D-75BLI
EDS2532EGBH-7BTT-F Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 Elpida Memory Inc H55S2532JFR-60M vs EDS2532EGBH-7BTT-F
H55S2622JFR-A3M Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-90 SK Hynix Inc H55S2532JFR-60M vs H55S2622JFR-A3M
MT48H8M32LFB5-75IT:G Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc H55S2532JFR-60M vs MT48H8M32LFB5-75IT:G
H55S2532JFR-A3M Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-90 SK Hynix Inc H55S2532JFR-60M vs H55S2532JFR-A3M
MT48H8M32LFB5-75IT Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc H55S2532JFR-60M vs MT48H8M32LFB5-75IT
H55S2532JFR-75M Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-90 SK Hynix Inc H55S2532JFR-60M vs H55S2532JFR-75M
IS42VM32800D-75BL Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90 Integrated Silicon Solution Inc H55S2532JFR-60M vs IS42VM32800D-75BL
HY5S5B2CLFP-6E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 SK Hynix Inc H55S2532JFR-60M vs HY5S5B2CLFP-6E
Part Number Description Manufacturer Compare
EDS2532EEBH-9A-E Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 Elpida Memory Inc H55S2532JFR-60M vs EDS2532EEBH-9A-E
K4S28323LE-HN600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor H55S2532JFR-60M vs K4S28323LE-HN600
K4M56323LE-EE1L0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor H55S2532JFR-60M vs K4M56323LE-EE1L0
K4M28323PH-HG750JR Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor H55S2532JFR-60M vs K4M28323PH-HG750JR
EDS2532CABH-75L-E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Elpida Memory Inc H55S2532JFR-60M vs EDS2532CABH-75L-E
IS42VM32800D-75BLI Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90 Integrated Silicon Solution Inc H55S2532JFR-60M vs IS42VM32800D-75BLI
K4S56323LF-HL1H0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor H55S2532JFR-60M vs K4S56323LF-HL1H0
K4M56323LE-ME800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor H55S2532JFR-60M vs K4M56323LE-ME800
W9825G2DB-75I Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-90 Winbond Electronics Corp H55S2532JFR-60M vs W9825G2DB-75I
K4S283233F-FN1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor H55S2532JFR-60M vs K4S283233F-FN1H0

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