Part Details for EDS2532EEBH-9A-E by Elpida Memory Inc
Overview of EDS2532EEBH-9A-E by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for EDS2532EEBH-9A-E
EDS2532EEBH-9A-E CAD Models
EDS2532EEBH-9A-E Part Data Attributes
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EDS2532EEBH-9A-E
Elpida Memory Inc
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Datasheet
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EDS2532EEBH-9A-E
Elpida Memory Inc
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA90,9X15,32 | |
| Pin Count | 90 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 111 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| JESD-609 Code | e1 | |
| Length | 13 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX32 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.14 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.16 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for EDS2532EEBH-9A-E
This table gives cross-reference parts and alternative options found for EDS2532EEBH-9A-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDS2532EEBH-9A-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S56323PF-HF1L0 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | EDS2532EEBH-9A-E vs K4S56323PF-HF1L0 |
| MT48H8M32LFB5-10IT:G | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 | Micron Technology Inc | EDS2532EEBH-9A-E vs MT48H8M32LFB5-10IT:G |
| K4S56323PF-HG900 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | EDS2532EEBH-9A-E vs K4S56323PF-HG900 |
| MT48H8M32LFB5-10 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 | Micron Technology Inc | EDS2532EEBH-9A-E vs MT48H8M32LFB5-10 |
| K4S56323PF-HG1L0 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | EDS2532EEBH-9A-E vs K4S56323PF-HG1L0 |
| MT48H8M32LFB5-10IT | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 | Micron Technology Inc | EDS2532EEBH-9A-E vs MT48H8M32LFB5-10IT |
| K4S56323PF-FF900 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | EDS2532EEBH-9A-E vs K4S56323PF-FF900 |
| K4S56323PF-FG1L0 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | EDS2532EEBH-9A-E vs K4S56323PF-FG1L0 |
| MT48H8M32LFB5-8IT | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 | Micron Technology Inc | EDS2532EEBH-9A-E vs MT48H8M32LFB5-8IT |
| MT48H8M32LFB5-10:G | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 | Micron Technology Inc | EDS2532EEBH-9A-E vs MT48H8M32LFB5-10:G |