Datasheets
FQPF8N90C by:

Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, TO-220F, 1000-TUBE

Part Details for FQPF8N90C by onsemi

Overview of FQPF8N90C by onsemi

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Price & Stock for FQPF8N90C

Part # Distributor Description Stock Price Buy
DISTI # 54AH8769
Newark Mosfet, N-Ch, 900V, 6.3A, 150Deg C, 60W Rohs Compliant: Yes |Onsemi FQPF8N90C Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Rochester Electronics Power Field-Effect Transistor, 6.3A, 900V, 1.9ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 18964
  • 1 $1.2800
  • 25 $1.2600
  • 100 $1.2100
  • 500 $1.1500
  • 1,000 $1.0900
$1.0900 / $1.2800 Buy Now
DISTI # 3368831
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 130
  • 1 $3.0103
  • 10 $2.7219
  • 100 $2.1819
  • 500 $1.9009
  • 1,000 $1.6124
  • 2,000 $1.4867
  • 5,000 $1.4349
$1.4349 / $3.0103 Buy Now
DISTI # 3368831
Farnell   RoHS: Compliant Min Qty: 1 Container: Each 19094
  • 1 $3.2322
  • 10 $2.5933
  • 100 $2.0796
$2.0796 / $3.2322 Buy Now

Part Details for FQPF8N90C

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FQPF8N90C Part Data Attributes:

FQPF8N90C onsemi
Buy Now Datasheet
Compare Parts:
FQPF8N90C onsemi Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, TO-220F, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description TO-220F, 3 PIN
Manufacturer Package Code 221AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 850 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 6.3 A
Drain-source On Resistance-Max 1.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQPF8N90C

This table gives cross-reference parts and alternative options found for FQPF8N90C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF8N90C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQPF6N90 Power Field-Effect Transistor, 3.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Fairchild Semiconductor Corporation FQPF8N90C vs FQPF6N90
Part Number Description Manufacturer Compare
FQPF8N90C N-Channel QFET® MOSFET 900V, 6.3A, 1.9Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL Fairchild Semiconductor Corporation FQPF8N90C vs FQPF8N90C
FQPF6N90 Power Field-Effect Transistor, 3.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Fairchild Semiconductor Corporation FQPF8N90C vs FQPF6N90
IRFZ44EPBF Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG FQPF8N90C vs IRFZ44EPBF
IRFZ44EPBF Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier FQPF8N90C vs IRFZ44EPBF
IRFZ44E Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG FQPF8N90C vs IRFZ44E
2SK2953 TRANSISTOR 15 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16F1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components FQPF8N90C vs 2SK2953

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