Datasheets
FQAF6N90 by:

4.5A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN

Part Details for FQAF6N90 by Rochester Electronics LLC

Overview of FQAF6N90 by Rochester Electronics LLC

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Part Details for FQAF6N90

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FQAF6N90 Part Data Attributes:

FQAF6N90 Rochester Electronics LLC
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FQAF6N90 Rochester Electronics LLC 4.5A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-3PF
Package Description TO-3PF, 3 PIN
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 710 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 1.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQAF6N90

This table gives cross-reference parts and alternative options found for FQAF6N90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQAF6N90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQPF8N90C N-Channel QFET® MOSFET 900V, 6.3A, 1.9Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL Fairchild Semiconductor Corporation FQAF6N90 vs FQPF8N90C
Part Number Description Manufacturer Compare
FQPF8N90C N-Channel QFET® MOSFET 900V, 6.3A, 1.9Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL Fairchild Semiconductor Corporation FQAF6N90 vs FQPF8N90C
FQPF6N90 Power Field-Effect Transistor, 3.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Fairchild Semiconductor Corporation FQAF6N90 vs FQPF6N90
IRFZ44EPBF Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG FQAF6N90 vs IRFZ44EPBF
IRFZ44EPBF Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier FQAF6N90 vs IRFZ44EPBF
IRFZ44E Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG FQAF6N90 vs IRFZ44E
2SK2953 TRANSISTOR 15 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16F1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components FQAF6N90 vs 2SK2953

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