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Transistors / Power Field-Effect Transistors / FDT457N
Datasheets
FDT457N by:

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ, 4000-REEL

Part Details for FDT457N by onsemi

Overview of FDT457N by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Industrial Automation Smart Cities Energy and Power Systems Renewable Energy

Price & Stock for FDT457N

Part # Distributor Description Stock Price Buy
DISTI # 38C7189
Newark Mosfet, N Ch, 30V, 5A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Product Range:- Rohs Compliant: Yes |Onsemi FDT457N Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 2,500 $0.4690
$0.4690 Buy Now
DISTI # 96W6889
Newark Mosfet, N Ch, 30V, 5A, Sot-223, Transistor Polarity:N Channel, Continuous Drain Current Id:5A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.043Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V, Power Dissipation Rohs Compliant: Yes |Onsemi FDT457N Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.4510
  • 12,000 $0.4320
  • 32,000 $0.3930
$0.3930 / $0.4510 Buy Now
DISTI # 85W3156
Newark Mosfet, N Ch, 30V, 5A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Product Range:- Rohs Compliant: Yes |Onsemi FDT457N Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.4740
  • 6,000 $0.4310
  • 12,000 $0.3880
  • 18,000 $0.3740
  • 30,000 $0.3650
$0.3650 / $0.4740 Buy Now
DISTI # 72Y5278
Newark Mosfet Transistor, N Channel, 5 A, 30 V, 0.043 Ohm, 10 V, 1.6 V Rohs Compliant: Yes |Onsemi FDT457N Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $1.1100
  • 10 $0.9510
  • 25 $0.8570
  • 50 $0.7770
  • 100 $0.6510
  • 250 $0.5770
  • 500 $0.5010
  • 1,000 $0.4800
$0.4800 / $1.1100 Buy Now
DISTI # FDT457NCT-ND
DigiKey MOSFET N-CH 30V 5A SOT223-4 Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 9964
In Stock
  • 1 $0.9600
  • 10 $0.7830
  • 100 $0.6092
  • 500 $0.5163
  • 1,000 $0.4206
  • 2,000 $0.3960
  • 4,000 $0.3960
  • 8,000 $0.3771
  • 12,000 $0.3597
$0.3597 / $0.9600 Buy Now
DISTI # FDT457N
Avnet Americas Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT457N) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel 0
  • 4,000 $0.4251
  • 8,000 $0.4136
  • 16,000 $0.4021
  • 24,000 $0.3906
  • 32,000 $0.3791
  • 40,000 $0.3676
  • 400,000 $0.3561
$0.3561 / $0.4251 Buy Now
DISTI # FDT457N
Avnet Americas Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT457N) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.4251
  • 8,000 $0.4136
  • 16,000 $0.4021
  • 24,000 $0.3906
  • 32,000 $0.3791
  • 40,000 $0.3676
  • 400,000 $0.3561
$0.3561 / $0.4251 Buy Now
DISTI # 512-FDT457N
Mouser Electronics MOSFET SOT-223 N-CH 30V RoHS: Compliant 6560
  • 1 $0.9500
  • 10 $0.7820
  • 100 $0.6090
  • 500 $0.5160
  • 1,000 $0.4200
  • 2,000 $0.3950
  • 4,000 $0.3860
  • 8,000 $0.3590
$0.3590 / $0.9500 Buy Now
DISTI # E02:0323_00840903
Arrow Electronics Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks Date Code: 2402 Europe - 4000
  • 4,000 $0.3586
  • 12,000 $0.3529
$0.3529 / $0.3586 Buy Now
DISTI # V72:2272_06300924
Arrow Electronics Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2328 Container: Cut Strips Americas - 21
  • 1 $0.9323
  • 10 $0.3855
$0.3855 / $0.9323 Buy Now
Future Electronics N-Channel 30 V 0.06 Ohm Enhancement Mode Field Effect Transistor-SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks Container: Reel 16000
Reel
  • 4,000 $0.3600
  • 8,000 $0.3550
  • 12,000 $0.3450
$0.3450 / $0.3600 Buy Now
DISTI # 79051317
Verical Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 4000 Package Multiple: 4000 Date Code: 2402 Americas - 4000
  • 4,000 $0.3572
  • 12,000 $0.3515
$0.3515 / $0.3572 Buy Now
DISTI # 70357766
Verical Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 16 Package Multiple: 1 Date Code: 2328 Americas - 21
  • 16 $0.3855
$0.3855 Buy Now
Rochester Electronics Power Field-Effect Transistor, 5A, 30V, 0.06ohm, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 10701
  • 1 $0.4188
  • 25 $0.4104
  • 100 $0.3937
  • 500 $0.3769
  • 1,000 $0.3560
$0.3560 / $0.4188 Buy Now
DISTI # FDT457N
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 4000 0
  • 4,000 $0.3600
$0.3600 Buy Now
DISTI # FDT457N
Avnet Silica Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT457N) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDT457N
EBV Elektronik Trans MOSFET N-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT457N) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDT457N

FDT457N CAD Models

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FDT457N Part Data Attributes

Parametric Data
FDT457N onsemi
Buy Now Datasheet
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FDT457N onsemi N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ, 4000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 318H-01
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDT457N

This table gives cross-reference parts and alternative options found for FDT457N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDT457N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STE36N50-DA 36A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 STMicroelectronics FDT457N vs STE36N50-DA
FDT457N_NL Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDT457N vs FDT457N_NL
FDT459N_NL Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDT457N vs FDT459N_NL
STE26N50 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 STMicroelectronics FDT457N vs STE26N50
FDT459N N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ, 4000-REEL onsemi FDT457N vs FDT459N
APT39M60J Power Field-Effect Transistor, 42A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 Microsemi Corporation FDT457N vs APT39M60J
STE36N50A 36A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 STMicroelectronics FDT457N vs STE36N50A
STN2NE10 2A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics FDT457N vs STN2NE10
STN2NE06 2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics FDT457N vs STN2NE06
STN3NE06L 3A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics FDT457N vs STN3NE06L

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