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Transistors Small Signal Field-Effect Transistors FDS6576

Transistors
FDS6576
Description: Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Overview of FDS6576 by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDS6576 by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1887
RFQ
Quest Components 11000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 3550
  • 1 $1.6060
  • 1,246 $0.5621
  • 2,670 $0.4818
$0.4818 / $1.6060 Buy Now
Quest Components 11000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 1200
  • 1 $1.4000
  • 87 $0.4200
  • 477 $0.3640
$0.3640 / $1.4000 Buy Now
Quest Components 11000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 94
  • 1 $0.9636
  • 20 $0.5782
  • 87 $0.4497
$0.4497 / $0.9636 Buy Now

CAD Models for FDS6576 by Fairchild Semiconductor Corporation
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Part Data Attributes for FDS6576 by Fairchild Semiconductor Corporation
Parametric Data

FDS6576
Fairchild Semiconductor Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
SOIC
Package Description
SO-8
Pin Count
8
Manufacturer Package Code
8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
11 A
Drain-source On Resistance-Max
0.014 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FDS6576
    Fairchild Semiconductor Corporation
    Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
    VS

Alternate Parts for FDS6576

This table gives cross-reference parts and alternative options found for FDS6576. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6576, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDS6576L86Z Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6576 vs FDS6576L86Z
FDS6576_NL Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6576 vs FDS6576_NL
FDS6576 11000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Rochester Electronics LLC FDS6576 vs FDS6576
Part Number Description Manufacturer Compare
STS10PF30L 10mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 STMicroelectronics FDS6576 vs STS10PF30L
NDS9435A/D84Z 5300mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Texas Instruments FDS6576 vs NDS9435A/D84Z
FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ, 2500-REEL onsemi FDS6576 vs FDS6675BZ
NDH832PD84Z Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation FDS6576 vs NDH832PD84Z
FDR840PD87Z Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation FDS6576 vs FDR840PD87Z
NDS8434AS62Z Small Signal Field-Effect Transistor, 7.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDS6576 vs NDS8434AS62Z
NDS9405 Small Signal Field-Effect Transistor, 4.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6576 vs NDS9405
SI4425DDY-T1-GE3 TRANSISTOR 13000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix FDS6576 vs SI4425DDY-T1-GE3
FDS4435L86Z Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6576 vs FDS4435L86Z
NDS9400A Small Signal Field-Effect Transistor, 3.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6576 vs NDS9400A

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