Datasheets
DMG3414UQ-7 by:

Small Signal Field-Effect Transistor,

Part Details for DMG3414UQ-7 by Diodes Incorporated

Overview of DMG3414UQ-7 by Diodes Incorporated

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Applications Consumer Electronics

Price & Stock for DMG3414UQ-7

Part # Distributor Description Stock Price Buy
DISTI # 28AK8407
Newark Mosfet, N-Ch, 20V, 4.2A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMG3414UQ-7 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2905
  • 1 $0.4470
  • 10 $0.3470
  • 25 $0.2960
  • 50 $0.2440
  • 100 $0.1930
  • 250 $0.1730
  • 500 $0.1530
  • 1,000 $0.1320
$0.1320 / $0.4470 Buy Now
DISTI # 31-DMG3414UQ-7CT-ND
DigiKey MOSFET N-CH 20V 4.2A SOT23-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3463
In Stock
  • 1 $0.4200
  • 10 $0.3240
  • 100 $0.1945
  • 500 $0.1801
  • 1,000 $0.1225
  • 3,000 $0.1127
  • 6,000 $0.1080
  • 9,000 $0.0972
  • 30,000 $0.0958
  • 75,000 $0.0919
$0.0919 / $0.4200 Buy Now
DISTI # DMG3414UQ-7
Avnet Americas MOSFET BVDSS: 8V~24V SOT23 T&R 3K - Tape and Reel (Alt: DMG3414UQ-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 102000
  • 3,000 $0.0865
$0.0865 Buy Now
DISTI # DMG3414UQ-7
Avnet Americas MOSFET BVDSS: 8V~24V SOT23 T&R 3K - Tape and Reel (Alt: DMG3414UQ-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.0865
$0.0865 Buy Now
DISTI # 621-DMG3414UQ-7
Mouser Electronics MOSFETs MOSFET BVDSS: 8V-24V RoHS: Compliant 78037
  • 1 $0.4200
  • 10 $0.3240
  • 100 $0.1800
  • 1,000 $0.1230
  • 3,000 $0.0980
  • 9,000 $0.0910
$0.0910 / $0.4200 Buy Now
DISTI # V36:1790_16647578
Arrow Electronics Trans MOSFET N-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2251 Americas - 18000
  • 3,000 $0.0892
  • 9,000 $0.0672
$0.0672 / $0.0892 Buy Now
Future Electronics Single N-Channel 20 V 37 mOhm 9.6 nC 0.78 W Silicon Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 168000
Reel
  • 3,000 $0.0901
  • 9,000 $0.0867
  • 15,000 $0.0851
  • 30,000 $0.0830
  • 60,000 $0.0799
$0.0799 / $0.0901 Buy Now
Future Electronics Single N-Channel 20 V 37 mOhm 9.6 nC 0.78 W Silicon Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 3,000 $0.0897
  • 9,000 $0.0862
  • 12,000 $0.0853
  • 30,000 $0.0825
  • 45,000 $0.0799
$0.0799 / $0.0897 Buy Now
Bristol Electronics   Min Qty: 12 5787
  • 12 $0.4500
  • 35 $0.2250
  • 224 $0.1350
  • 1,113 $0.0900
  • 3,890 $0.0675
$0.0675 / $0.4500 Buy Now
Quest Components   4629
  • 1 $0.6000
  • 279 $0.1200
  • 3,334 $0.0900
$0.0900 / $0.6000 Buy Now
DISTI # DMG3414UQ-7
TME Transistor: N-MOSFET, unipolar, 20V, 3.2A, Idm: 30A, 780mW, SOT23 Min Qty: 1 0
  • 1 $0.4050
  • 10 $0.3290
  • 30 $0.2610
  • 100 $0.1900
  • 500 $0.1280
  • 1,000 $0.1150
$0.1150 / $0.4050 RFQ
DISTI # DMG3414UQ-7
Avnet Asia MOSFET BVDSS: 8V~24V SOT23 T&R 3K (Alt: DMG3414UQ-7) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days 0
  • 6,000 $0.1335
  • 12,000 $0.1318
  • 18,000 $0.0692
$0.0692 / $0.1335 Buy Now
DISTI # DMG3414UQ-7
Avnet Silica MOSFET BVDSS: 8V~24V SOT23 T&R 3K (Alt: DMG3414UQ-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
LCSC 20V 4.2A 25m4.5V8.2A 780mW 900mV250uA 1 N-Channel SOT-23 MOSFETs ROHS 1782
  • 5 $0.1549
  • 50 $0.1302
  • 150 $0.1196
  • 500 $0.1063
  • 3,000 $0.1004
  • 6,000 $0.0969
$0.0969 / $0.1549 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 135000
  • 3,000 $0.0909
  • 135,000 $0.0848
$0.0848 / $0.0909 Buy Now

Part Details for DMG3414UQ-7

DMG3414UQ-7 CAD Models

DMG3414UQ-7 Part Data Attributes

DMG3414UQ-7 Diodes Incorporated
Buy Now Datasheet
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DMG3414UQ-7 Diodes Incorporated Small Signal Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.2 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 81.2 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard AEC-Q101; IATF 16949; MIL-STD-202
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for DMG3414UQ-7

This table gives cross-reference parts and alternative options found for DMG3414UQ-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMG3414UQ-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2312BDS-T1-GE3 TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix DMG3414UQ-7 vs SI2312BDS-T1-GE3
SI2312BDS-T1-E3 TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix DMG3414UQ-7 vs SI2312BDS-T1-E3
SI2312DS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix DMG3414UQ-7 vs SI2312DS
SI2312DS-E3 Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN Vishay Siliconix DMG3414UQ-7 vs SI2312DS-E3
SI2312BDS-T1-GE3 Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies DMG3414UQ-7 vs SI2312BDS-T1-GE3
Part Number Description Manufacturer Compare
SI2312DS-E3 Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN Vishay Siliconix DMG3414UQ-7 vs SI2312DS-E3
SI2312BDS-T1-GE3 Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies DMG3414UQ-7 vs SI2312BDS-T1-GE3
SI2312BDS-T1-E3 TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix DMG3414UQ-7 vs SI2312BDS-T1-E3
SI2312DS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix DMG3414UQ-7 vs SI2312DS
SI2312BDS-T1-GE3 TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix DMG3414UQ-7 vs SI2312BDS-T1-GE3
SSM3K345R Small Signal Field-Effect Transistor Toshiba America Electronic Components DMG3414UQ-7 vs SSM3K345R

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