Part Details for CM100DU-12F by Powerex Power Semiconductors
Overview of CM100DU-12F by Powerex Power Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Part Details for CM100DU-12F
CM100DU-12F CAD Models
CM100DU-12F Part Data Attributes
|
|
CM100DU-12F
Powerex Power Semiconductors
Buy Now
Datasheet
|
Compare Parts:
CM100DU-12F
Powerex Power Semiconductors
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,
|
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | POWEREX INC | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RTC | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 350 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.2 V |
Alternate Parts for CM100DU-12F
This table gives cross-reference parts and alternative options found for CM100DU-12F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM100DU-12F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG300J2YS11 | TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM100DU-12F vs MG300J2YS11 |
| CM400DY-12H | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | CM100DU-12F vs CM400DY-12H |
| 2MBI300NB-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M235, 7 PIN | Fuji Electric Co Ltd | CM100DU-12F vs 2MBI300NB-060 |
| APTGT300A60G | Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel | Microchip Technology Inc | CM100DU-12F vs APTGT300A60G |
| 2MBI300N-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | CM100DU-12F vs 2MBI300N-060 |
| MG300J2YS40 | TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM100DU-12F vs MG300J2YS40 |
| MG400J2YS50 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, 2-109D1A, 8 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM100DU-12F vs MG400J2YS50 |
| MG400J1US41 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM100DU-12F vs MG400J1US41 |
| MG100J2YS50 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, 2-94D1A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM100DU-12F vs MG100J2YS50 |
| GP250MHB06S | Insulated Gate Bipolar Transistor, 350A I(C), 600V V(BR)CES, N-Channel, | Dynex Semiconductor | CM100DU-12F vs GP250MHB06S |