Part Details for MG400J1US41 by Toshiba America Electronic Components
Overview of MG400J1US41 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MG400J1US41
MG400J1US41 CAD Models
MG400J1US41 Part Data Attributes
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MG400J1US41
Toshiba America Electronic Components
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Datasheet
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MG400J1US41
Toshiba America Electronic Components
TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-PUFM-X4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH SPEED | |
Collector Current-Max (IC) | 400 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 350 ns | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 3.5 V |
Alternate Parts for MG400J1US41
This table gives cross-reference parts and alternative options found for MG400J1US41. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG400J1US41, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CM600HA-12H | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | MG400J1US41 vs CM600HA-12H |
CM400DY-12H | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | MG400J1US41 vs CM400DY-12H |
CM400DY-12H | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | MG400J1US41 vs CM400DY-12H |
1MBI600NN-060 | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-4 | Fuji Electric Co Ltd | MG400J1US41 vs 1MBI600NN-060 |
CM400DY-12NF | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Powerex Power Semiconductors | MG400J1US41 vs CM400DY-12NF |
MG400H1US1 | TRANSISTOR 400 A, 500 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG400J1US41 vs MG400H1US1 |
MG150J2YS50 | TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, 2-95A1A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG400J1US41 vs MG150J2YS50 |
MG300H1US1 | TRANSISTOR 300 A, 500 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG400J1US41 vs MG300H1US1 |
2MBI100F-060 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN | Fuji Electric Co Ltd | MG400J1US41 vs 2MBI100F-060 |
1MBI300F-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN | Fuji Electric Co Ltd | MG400J1US41 vs 1MBI300F-060 |