There are no models available for this part yet.
Overview of MG400J1US41 by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Electronic Manufacturing
Robotics and Drones
CAD Models for MG400J1US41 by Toshiba America Electronic Components
Part Data Attributes for MG400J1US41 by Toshiba America Electronic Components
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|---|---|
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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TOSHIBA CORP
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Package Description
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FLANGE MOUNT, R-PUFM-X4
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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HIGH SPEED
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Collector Current-Max (IC)
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400 A
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Collector-Emitter Voltage-Max
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600 V
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Configuration
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SINGLE WITH BUILT-IN DIODE
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Fall Time-Max (tf)
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350 ns
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JESD-30 Code
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R-PUFM-X4
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Number of Elements
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1
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Number of Terminals
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4
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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UNSPECIFIED
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Terminal Position
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UPPER
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Transistor Application
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POWER CONTROL
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Transistor Element Material
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SILICON
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VCEsat-Max
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3.5 V
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Alternate Parts for MG400J1US41
This table gives cross-reference parts and alternative options found for MG400J1US41. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG400J1US41, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG300J2YS11 | TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG400J1US41 vs MG300J2YS11 |
| CM400DY-12H | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | MG400J1US41 vs CM400DY-12H |
| 2MBI300NB-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M235, 7 PIN | Fuji Electric Co Ltd | MG400J1US41 vs 2MBI300NB-060 |
| APTGT300A60G | Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel | Microchip Technology Inc | MG400J1US41 vs APTGT300A60G |
| 2MBI300N-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | MG400J1US41 vs 2MBI300N-060 |
| MG300J2YS40 | TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG400J1US41 vs MG300J2YS40 |
| MG400J2YS50 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, 2-109D1A, 8 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG400J1US41 vs MG400J2YS50 |
| MG100J2YS50 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, 2-94D1A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG400J1US41 vs MG100J2YS50 |
| GP250MHB06S | Insulated Gate Bipolar Transistor, 350A I(C), 600V V(BR)CES, N-Channel, | Dynex Semiconductor | MG400J1US41 vs GP250MHB06S |
| BSM400GB60DN2 | Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, | Siemens | MG400J1US41 vs BSM400GB60DN2 |