Datasheets
BSM150GB120DLC by:

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for BSM150GB120DLC by Infineon Technologies AG

Overview of BSM150GB120DLC by Infineon Technologies AG

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Part Details for BSM150GB120DLC

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BSM150GB120DLC Part Data Attributes

BSM150GB120DLC Infineon Technologies AG
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BSM150GB120DLC Infineon Technologies AG Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-7
Pin Count 7
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 300 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1200 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 650 ns
Turn-on Time-Nom (ton) 190 ns
VCEsat-Max 2.6 V

Alternate Parts for BSM150GB120DLC

This table gives cross-reference parts and alternative options found for BSM150GB120DLC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM150GB120DLC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APTGT200A120D3G Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc BSM150GB120DLC vs APTGT200A120D3G
FF200R12KS4 Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM150GB120DLC vs FF200R12KS4
BSM150GB120DLCHOSA1 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM150GB120DLC vs BSM150GB120DLCHOSA1
FF200R12KT3EHOSA1 Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM150GB120DLC vs FF200R12KT3EHOSA1
CM300DU-24H Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, Mitsubishi Electric BSM150GB120DLC vs CM300DU-24H
FF200R12KT3 Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM150GB120DLC vs FF200R12KT3
BSM100GB120DLCHOSA1 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM150GB120DLC vs BSM100GB120DLCHOSA1
FF200R12KS4HOSA1 Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM150GB120DLC vs FF200R12KS4HOSA1
FF200R12KE4HOSA1 Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM150GB120DLC vs FF200R12KE4HOSA1
MII300-12A4 Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Littelfuse Inc BSM150GB120DLC vs MII300-12A4

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