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MOSFET N-CH 60V 46A TO252
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
800-3742-1-ND
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DigiKey | MOSFET N-CH 60V 46A TO252 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.2850 / $0.8600 | Buy Now |
DISTI #
AOD2610E
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TME | Transistor: N-MOSFET, unipolar, 60V, 36.5A, 23.5W, TO252 Min Qty: 2 | 1701 |
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$0.2540 / $0.3910 | Buy Now |
DISTI #
C1S111400623293
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Chip1Stop | MOSFET RoHS: Compliant | 10000 |
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$0.1820 / $0.2050 | Buy Now |
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LCSC | 60V 46A 9.5m10V20A 59.5W 2.4V250uA 1 N-Channel TO-252-2 MOSFETs ROHS | 5238 |
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$0.2118 / $0.4108 | Buy Now |
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Win Source Electronics | MOSFET N-CH 60V 46A TO252 | 388700 |
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$0.2170 / $0.3250 | Buy Now |
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AOD2610E
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOD2610E
Alpha & Omega Semiconductor
MOSFET N-CH 60V 46A TO252
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Alpha & Omega Semiconductors | |
Avalanche Energy Rating (Eas) | 43 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 46 A | |
Drain-source On Resistance-Max | 0.0133 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for AOD2610E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOD2610E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB45N06S3L-13 | Power Field-Effect Transistor, 45A I(D), 55V, 0.0131ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | AOD2610E vs IPB45N06S3L-13 |
IRFZ44Z | Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | AOD2610E vs IRFZ44Z |
APM6004NUC-TRG | Power Field-Effect Transistor, 45A I(D), 60V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN PACKAGE-3 | American Power Devices Inc | AOD2610E vs APM6004NUC-TRG |
IRLZ44ZS | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | AOD2610E vs IRLZ44ZS |
IRFZ46ZS | Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | AOD2610E vs IRFZ46ZS |
SSD50N06-15D-C | Power Field-Effect Transistor, 51A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN AND LEAD FREE, MINIATURE, DPAK-3/2 | Secos Corporation | AOD2610E vs SSD50N06-15D-C |
IPD127N06LG | Power Field-Effect Transistor, 50A I(D), 60V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | AOD2610E vs IPD127N06LG |
SSD50N06-15D | Power Field-Effect Transistor, 51A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, MINIATURE, DPAK-3/2 | Secos Corporation | AOD2610E vs SSD50N06-15D |