Datasheets
AOD2610E by:

MOSFET N-CH 60V 46A TO252

Part Details for AOD2610E by Alpha & Omega Semiconductor

Overview of AOD2610E by Alpha & Omega Semiconductor

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Price & Stock for AOD2610E

Part # Distributor Description Stock Price Buy
DISTI # 800-3742-1-ND
DigiKey MOSFET N-CH 60V 46A TO252 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $0.8600
  • 2,500 $0.3281
  • 5,000 $0.3109
  • 12,500 $0.2878
  • 25,000 $0.2850
$0.2850 / $0.8600 Buy Now
DISTI # AOD2610E
TME Transistor: N-MOSFET, unipolar, 60V, 36.5A, 23.5W, TO252 Min Qty: 2 1701
  • 2 $0.3910
  • 25 $0.3440
  • 100 $0.3030
  • 500 $0.2730
  • 2,500 $0.2540
$0.2540 / $0.3910 Buy Now
DISTI # C1S111400623293
Chip1Stop MOSFET RoHS: Compliant 10000
  • 2,500 $0.2050
  • 5,000 $0.1840
  • 10,000 $0.1820
$0.1820 / $0.2050 Buy Now
LCSC 60V 46A 9.5m10V20A 59.5W 2.4V250uA 1 N-Channel TO-252-2 MOSFETs ROHS 5238
  • 1 $0.4108
  • 10 $0.3350
  • 30 $0.3018
  • 100 $0.2607
  • 500 $0.2228
  • 1,000 $0.2118
$0.2118 / $0.4108 Buy Now
Win Source Electronics MOSFET N-CH 60V 46A TO252 388700
  • 155 $0.3250
  • 375 $0.2670
  • 580 $0.2590
  • 800 $0.2500
  • 1,035 $0.2420
  • 1,385 $0.2170
$0.2170 / $0.3250 Buy Now

Part Details for AOD2610E

AOD2610E Part Data Attributes

AOD2610E Alpha & Omega Semiconductor
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AOD2610E Alpha & Omega Semiconductor MOSFET N-CH 60V 46A TO252
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors
Avalanche Energy Rating (Eas) 43 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 46 A
Drain-source On Resistance-Max 0.0133 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AOD2610E

This table gives cross-reference parts and alternative options found for AOD2610E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOD2610E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB45N06S3L-13 Power Field-Effect Transistor, 45A I(D), 55V, 0.0131ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG AOD2610E vs IPB45N06S3L-13
IRFZ44Z Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 Infineon Technologies AG AOD2610E vs IRFZ44Z
APM6004NUC-TRG Power Field-Effect Transistor, 45A I(D), 60V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN PACKAGE-3 American Power Devices Inc AOD2610E vs APM6004NUC-TRG
IRLZ44ZS Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG AOD2610E vs IRLZ44ZS
IRFZ46ZS Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG AOD2610E vs IRFZ46ZS
SSD50N06-15D-C Power Field-Effect Transistor, 51A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN AND LEAD FREE, MINIATURE, DPAK-3/2 Secos Corporation AOD2610E vs SSD50N06-15D-C
IPD127N06LG Power Field-Effect Transistor, 50A I(D), 60V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG AOD2610E vs IPD127N06LG
SSD50N06-15D Power Field-Effect Transistor, 51A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, MINIATURE, DPAK-3/2 Secos Corporation AOD2610E vs SSD50N06-15D

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