AGR09130EU
Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-3

Overview of AGR09130EU by TriQuint Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Environmental Monitoring Automotive

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Part Data Attributes for AGR09130EU by TriQuint Semiconductor

AGR09130EU
TriQuint Semiconductor
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
TRIQUINT SEMICONDUCTOR INC
Package Description
FLATPACK, R-CDFP-F2
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
65 V
Drain Current-Max (ID)
15 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-CDFP-F2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLATPACK
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Want to compare parts?
  1. AGR09130EU
    TriQuint Semiconductor
    RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-3
    VS

Alternate Parts for AGR09130EU

This table gives cross-reference parts and alternative options found for AGR09130EU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AGR09130EU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
AGR09130EU RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-2 LSI Corporation AGR09130EU vs AGR09130EU
Part Number Description Manufacturer Compare
AGR09130EF RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-2 Broadcom Limited AGR09130EU vs AGR09130EF
AGR09130EU RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-2 LSI Corporation AGR09130EU vs AGR09130EU
AGR09130EF RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-2 LSI Corporation AGR09130EU vs AGR09130EF

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