AGR09130EU
vs
AGR09130EF
feature comparison
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
TRIQUINT SEMICONDUCTOR INC
|
BROADCOM INC
|
Package Description |
FLATPACK, R-CDFP-F2
|
FM-2
|
Pin Count |
3
|
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
65 V
|
65 V
|
Drain Current-Max (ID) |
15 A
|
15 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
JESD-30 Code |
R-CDFP-F2
|
R-CDFM-F2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
200 °C
|
200 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLATPACK
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
JESD-609 Code |
|
e0
|
Peak Reflow Temperature (Cel) |
|
225
|
Power Dissipation-Max (Abs) |
|
350 W
|
Terminal Finish |
|
TIN LEAD
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|