Parametric results for: AGR09130EU under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 5

5 hits Apply

SOURCE 5

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

65 V 5

5 hits Apply

Drain Current-Max (ID) (1)

15 A 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 5

5 hits Apply

R-CDFP-F2 5

5 hits Apply

e0 3

5 hits Apply

Manufacturer (5)

Avago Technologies 1 Broadcom Limited 1 LSI Corporation 1 Qorvo 1 TriQuint Semiconductor 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

200.0 °C 4

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

FLATPACK 5

5 hits Apply

Active 3 Transferred 2

5 hits Apply

No 1

5 hits Apply

225 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

350 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply