5962-8851803LA by:

OTP ROM, 512X8, 40ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24

Part Details for 5962-8851803LA by Teledyne e2v

Overview of 5962-8851803LA by Teledyne e2v

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Applications Education and Research Internet of Things (IoT) Industrial Automation Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Electronic Manufacturing Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
5962-8672601EA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.875 INCH, DIP-16
5962-8672601FA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.375 INCH, FP-16
5962-87518013A Rochester Electronics LLC Interrupt Controller, NMOS, CQCC28, CERAMIC, LCC-28

Price & Stock for 5962-8851803LA

Part # Distributor Description Stock Price Buy
Teledyne e2v PROM, 512 X 8, REGISTERED, 40 NS Lead time: 14 Weeks, 0 Days 0
RFQ

Part Details for 5962-8851803LA

5962-8851803LA CAD Models

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5962-8851803LA Part Data Attributes

5962-8851803LA Teledyne e2v
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5962-8851803LA Teledyne e2v OTP ROM, 512X8, 40ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24
Part Life Cycle Code Active
Ihs Manufacturer TELEDYNE E2V (UK) LTD
Part Package Code DIP
Package Description DIP, DIP24,.3
Pin Count 24
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.71
Access Time-Max 40 ns
I/O Type COMMON
JESD-30 Code R-GDIP-T24
JESD-609 Code e0
Length 31.877 mm
Memory Density 4096 bit
Memory IC Type OTP ROM
Memory Width 8
Number of Functions 1
Number of Terminals 24
Number of Words 512 words
Number of Words Code 512
Operating Mode SYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Organization 512X8
Output Characteristics REGISTERED
Package Body Material CERAMIC, GLASS-SEALED
Package Code DIP
Package Equivalence Code DIP24,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial PARALLEL
Programming Voltage 13 V
Qualification Status Qualified
Screening Level 38535Q/M;38534H;883B
Seated Height-Max 5.08 mm
Standby Current-Max 0.12 A
Supply Current-Max 0.12 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Width 7.62 mm

Alternate Parts for 5962-8851803LA

This table gives cross-reference parts and alternative options found for 5962-8851803LA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 5962-8851803LA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C225A-40PI OTP ROM, 512X8, 25ns, CMOS, PDIP24, 0.300 INCH, SLIM, PLASTIC, DIP-24 Cypress Semiconductor 5962-8851803LA vs CY7C225A-40PI
63RA481ANS OTP ROM, 512X8, 25ns, CMOS, PDIP24, Monolithic Memories (RETIRED) 5962-8851803LA vs 63RA481ANS
63RA481AJSXXXX OTP ROM, 512X8, 25ns, CMOS, CDIP24, Monolithic Memories (RETIRED) 5962-8851803LA vs 63RA481AJSXXXX
CY7C225-40DI OTP ROM, 512X8, 25ns, CMOS, CDIP24, 0.300 INCH, SLIM, HERMETIC SEALED, CERDIP-24 Cypress Semiconductor 5962-8851803LA vs CY7C225-40DI
63RA481ANSXXXX OTP ROM, 512X8, 25ns, CMOS, PDIP24, Monolithic Memories (RETIRED) 5962-8851803LA vs 63RA481ANSXXXX
MB7226RA-25Z OTP ROM, 512X8, 25ns, Bipolar, CDIP24, CERDIP-24 FUJITSU Semiconductor Limited 5962-8851803LA vs MB7226RA-25Z
63RA481AJS OTP ROM, 512X8, 25ns, CMOS, CDIP24, Monolithic Memories (RETIRED) 5962-8851803LA vs 63RA481AJS
5962-8851803LX OTP ROM, 512X8, 25ns, CMOS, 1.280 X 0.310 INCH, 0.200 INCH HEIGHT, DIP-24 Cypress Semiconductor 5962-8851803LA vs 5962-8851803LX
Part Number Description Manufacturer Compare
53RA481AJS883B OTP ROM, 512X8, 30ns, CMOS, CDIP24, Monolithic Memories (RETIRED) 5962-8851803LA vs 53RA481AJS883B
5962-88518013A OTP ROM, 512X8, 15ns, CMOS, CQCC28, CERAMIC, LCC-28 Teledyne e2v 5962-8851803LA vs 5962-88518013A
AM27S25SADC OTP ROM, 512X8, 12ns, Bipolar, CDIP24, 0.300 INCH, CERAMIC, DIP-24 AMD 5962-8851803LA vs AM27S25SADC
DM74S475AJ 512X8 OTPROM, 45ns, CDIP24, CERAMIC, DIP-24 Texas Instruments 5962-8851803LA vs DM74S475AJ
AM27S31DC OTP ROM, 512X8, 55ns, Bipolar, CDIP24, CERAMIC, DIP-24 AMD 5962-8851803LA vs AM27S31DC
DM87SR474BJ IC 512 X 8 OTPROM, CDIP24, CERAMIC, DIP-24, Programmable ROM Texas Instruments 5962-8851803LA vs DM87SR474BJ
DM87SR476N IC 512 X 8 OTPROM, PDIP24, PLASTIC, DIP-24, Programmable ROM National Semiconductor Corporation 5962-8851803LA vs DM87SR476N
DM87SR476BJ IC 512 X 8 OTPROM, CDIP24, CERAMIC, DIP-24, Programmable ROM National Semiconductor Corporation 5962-8851803LA vs DM87SR476BJ
N82S115NB OTP ROM, 512X8, 60ns, Bipolar, PDIP24, Signetics 5962-8851803LA vs N82S115NB
6341-2NXXXX OTP ROM, 512X8, 55ns, CMOS, PDIP24, Monolithic Memories (RETIRED) 5962-8851803LA vs 6341-2NXXXX

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