Datasheets
2SK2521-01 by: Fuji Electric Co Ltd

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for 2SK2521-01 by Fuji Electric Co Ltd

Overview of 2SK2521-01 by Fuji Electric Co Ltd

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Part Details for 2SK2521-01

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2SK2521-01 Part Data Attributes:

2SK2521-01 Fuji Electric Co Ltd
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2SK2521-01 Fuji Electric Co Ltd Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJI ELECTRIC CO LTD
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK2521-01

This table gives cross-reference parts and alternative options found for 2SK2521-01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2521-01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor 2SK2521-01 vs IRF641
IRF642 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products 2SK2521-01 vs IRF642
BUK455-200A TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power NXP Semiconductors 2SK2521-01 vs BUK455-200A
IRF642 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor 2SK2521-01 vs IRF642
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier 2SK2521-01 vs IRF641
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor 2SK2521-01 vs IRF641
RFP15N15 Power Field-Effect Transistor, 15A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation 2SK2521-01 vs RFP15N15
IRF641 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation 2SK2521-01 vs IRF641
YTF642 TRANSISTOR 16 A, 200 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power Toshiba America Electronic Components 2SK2521-01 vs YTF642
STP19NB20 19A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics 2SK2521-01 vs STP19NB20
Part Number Description Manufacturer Compare
2SK2534 Power Field-Effect Transistor, 16A I(D), 250V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN SANYO Electric Co Ltd 2SK2521-01 vs 2SK2534
MTP12N20 12A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC 2SK2521-01 vs MTP12N20
IRF640SPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier 2SK2521-01 vs IRF640SPBF
SFR9120TM Power Field-Effect Transistor, 4.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation 2SK2521-01 vs SFR9120TM
IRLW640ATM Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation 2SK2521-01 vs IRLW640ATM
IRF640S Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products 2SK2521-01 vs IRF640S
STB18N20 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-2 STMicroelectronics 2SK2521-01 vs STB18N20
2SK1620(S)TL Power Field-Effect Transistor, 10A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd 2SK2521-01 vs 2SK1620(S)TL
IRF640S 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC 2SK2521-01 vs IRF640S
FQB19N20TM Power MOSFET, N-Channel, QFET®, 200 V, 19.4 A, 150 mΩ, D2PAK, 800-REEL onsemi 2SK2521-01 vs FQB19N20TM

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