Datasheets
2N6784 by:

Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Details for 2N6784 by International Rectifier

Overview of 2N6784 by International Rectifier

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Price & Stock for 2N6784

Part # Distributor Description Stock Price Buy
Rochester Electronics 2N6784 - Power Field-Effect Transistor, N-Channel, MOSFET RoHS: Not Compliant Status: Active Min Qty: 1 2
  • 1 $0.7292
  • 25 $0.7146
  • 100 $0.6854
  • 500 $0.6563
  • 1,000 $0.6198
$0.6198 / $0.7292 Buy Now

Part Details for 2N6784

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2N6784 Part Data Attributes:

2N6784 International Rectifier
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2N6784 International Rectifier Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 48 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 2.25 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 9 A
Qualification Status Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N6784

This table gives cross-reference parts and alternative options found for 2N6784. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6784, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6784 2.25A, 200V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6784 vs 2N6784
IRFF210-JQR-B Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6784 vs IRFF210-JQR-B
2N6784TX Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier 2N6784 vs 2N6784TX
IRFF210-JQR-BR1 2.25A, 200V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6784 vs IRFF210-JQR-BR1
IRFF210 Power Field-Effect Transistor, 2.2A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 Vishay Siliconix 2N6784 vs IRFF210
IRFF210 2.2A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation 2N6784 vs IRFF210
JANTX2N6784 Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) 2N6784 vs JANTX2N6784
2N6784 2.25A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation 2N6784 vs 2N6784
2N6784 2.25A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 Motorola Mobility LLC 2N6784 vs 2N6784
2N6784TXV Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Fairchild Semiconductor Corporation 2N6784 vs 2N6784TXV
Part Number Description Manufacturer Compare
JAN2N6784 Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) 2N6784 vs JAN2N6784
2N6784.MODR1 2.25A, 200V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6784 vs 2N6784.MODR1
JANTX2N6784 Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) 2N6784 vs JANTX2N6784
IRFF212 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC 2N6784 vs IRFF212
IRFF210R Power Field-Effect Transistor, 2.2A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor 2N6784 vs IRFF210R
JAN2N6784 Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency 2N6784 vs JAN2N6784
JANTXV2N6784 Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) 2N6784 vs JANTXV2N6784
2N6784 Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Infineon Technologies AG 2N6784 vs 2N6784
2N6784 2.25A, 200V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6784 vs 2N6784
IRFF212 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation 2N6784 vs IRFF212

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