Datasheets
IRFF210R by:

Power Field-Effect Transistor, 2.2A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Details for IRFF210R by Harris Semiconductor

Overview of IRFF210R by Harris Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRFF210R

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IRFF210R Part Data Attributes:

IRFF210R Harris Semiconductor
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IRFF210R Harris Semiconductor Power Field-Effect Transistor, 2.2A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 30 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 2.2 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 15 W
Power Dissipation-Max (Abs) 15 W
Pulsed Drain Current-Max (IDM) 9 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 30 ns
Turn-on Time-Max (ton) 40 ns

Alternate Parts for IRFF210R

This table gives cross-reference parts and alternative options found for IRFF210R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF210R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFF210R 2.2A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation IRFF210R vs IRFF210R
Part Number Description Manufacturer Compare
2N6784 2.25A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 Motorola Mobility LLC IRFF210R vs 2N6784
UFNF212 Power Field-Effect Transistor, 1.8A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) IRFF210R vs UFNF212
2N6784.MOD Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors IRFF210R vs 2N6784.MOD
2N6784TX Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier IRFF210R vs 2N6784TX
JANTX2N6784 Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF210R vs JANTX2N6784
IRFF211 2.2A, 150V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF210R vs IRFF211
IRFF210 Power Field-Effect Transistor, 2.2A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 Vishay Siliconix IRFF210R vs IRFF210
IRFF210R 2.2A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation IRFF210R vs IRFF210R
IRFF210R1 Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors IRFF210R vs IRFF210R1
JANTX2N6784 Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier IRFF210R vs JANTX2N6784

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