Part Details for 2N6764 by International Rectifier
Overview of 2N6764 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2N6764
2N6764 CAD Models
2N6764 Part Data Attributes:
|
2N6764
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
2N6764
International Rectifier
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
|
Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-3 | |
Package Description | HERMETIC SEALED, TO-204, 2 PIN | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 38 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-204 | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 152 A | |
Qualification Status | Not Qualified | |
Reference Standard | MILITARY STANDARD (USA) | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2N6764
This table gives cross-reference parts and alternative options found for 2N6764. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6764, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF153 | 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | 2N6764 vs IRF153 |
2N6764PBF | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | International Rectifier | 2N6764 vs 2N6764PBF |
2N6764-QR-B | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | TT Electronics Resistors | 2N6764 vs 2N6764-QR-B |
UFN150 | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | 2N6764 vs UFN150 |
IRF151 | Power Field-Effect Transistor, 33A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | TT Electronics Resistors | 2N6764 vs IRF151 |
IRF150 | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6764 vs IRF150 |
2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Harris Semiconductor | 2N6764 vs 2N6764 |
JANTX2N6764 | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Intersil Corporation | 2N6764 vs JANTX2N6764 |
2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN | Microsemi Corporation | 2N6764 vs 2N6764 |
2N6764 | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6764 vs 2N6764 |