Part Details for 2SK2850-01 by Fuji Electric Co Ltd
Overview of 2SK2850-01 by Fuji Electric Co Ltd
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK2850-01
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 900V, 2.5OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247 | 90 |
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$3.5750 / $8.2500 | Buy Now |
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Sense Electronic Company Limited | TO-3P | 1375 |
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RFQ |
Part Details for 2SK2850-01
2SK2850-01 CAD Models
2SK2850-01 Part Data Attributes:
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2SK2850-01
Fuji Electric Co Ltd
Buy Now
Datasheet
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Compare Parts:
2SK2850-01
Fuji Electric Co Ltd
Power Field-Effect Transistor, 6A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, SC-65, TO-3P, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Part Package Code | TO-247 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 277 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 2.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK2850-01
This table gives cross-reference parts and alternative options found for 2SK2850-01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2850-01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXFH36N55Q2 | Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Littelfuse Inc | 2SK2850-01 vs IXFH36N55Q2 |
2SK1549R | Power Field-Effect Transistor, 20A I(D), 250V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fuji Electric Co Ltd | 2SK2850-01 vs 2SK1549R |
2SK1033 | Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Panasonic Electronic Components | 2SK2850-01 vs 2SK1033 |
2SK4199LS | TRANSISTOR 3 A, 650 V, 3.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FI-LS, 3 PIN, FET General Purpose Power | onsemi | 2SK2850-01 vs 2SK4199LS |
APT5020BVFRG | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | 2SK2850-01 vs APT5020BVFRG |
2SK3780-01 | Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Fuji Electric Co Ltd | 2SK2850-01 vs 2SK3780-01 |
2SK2192 | Power Field-Effect Transistor, 12A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | 2SK2850-01 vs 2SK2192 |
2SK2160 | Power Field-Effect Transistor, 7A I(D), 200V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN | SANYO Electric Co Ltd | 2SK2850-01 vs 2SK2160 |
2SK1892 | Power Field-Effect Transistor, 15A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SANYO Electric Co Ltd | 2SK2850-01 vs 2SK1892 |
2SK2804 | Power Field-Effect Transistor, 5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FM20, 3 PIN | Sanken Electric Co Ltd | 2SK2850-01 vs 2SK2804 |